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HSMS-282x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sam pling, clamping, and wave shaping. The HSMS282x series of diodes is the best allaround choice for most applica tions, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. Note that Avago's manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.
Features
* Low TurnOn Voltage (As Low as 0.34 V at 1 mA) * Low FIT (Failure in Time) Rate* * Sixsigma Quality Level * Single, Dual and Quad Versions * Unique Configurations in Surface Mount SOT363
Package
- increase flexibility - save board space - reduce cost * HSMS282K Grounded Center Leads Provide up to 10 dB Higher Isolation * Matched Diodes for Consistent Performance * Better Thermal Conductivity for Higher Power Dissipation
Package Lead Code Identification, SOT-23/SOT-143 (Top View)
SINGLE 3 SERIES 3 COMMON ANODE 3 COMMON CATHODE 3
* Leadfree Option Available * For more information see the Surface Mount Schottky Reliability Data Sheet.
1
#0
2
1
#2
2
1
#3
2
1
#4
2
UNCONNECTED PAIR 3 4
RING QUAD 3 4
BRIDGE QUAD 3 4
CROSS-OVER QUAD 3 4
Package Lead Code Identification, SOT-363 (Top View)
HIGH ISOLATION UNCONNECTED PAIR
6 5 4
1
#5
2
1
#7
2
1
#8
2
1
#9
2
UNCONNECTED TRIO
6 5 4
Package Lead Code Identification, SOT-323 (Top View)
SINGLE SERIES
1
2
K
3
1
2
L
3
COMMON CATHODE QUAD
6 5 4
COMMON ANODE QUAD
6 5 4
1
2
B COMMON ANODE
C COMMON CATHODE
M
3
1
2
N
3
6
BRIDGE QUAD
5 4
6
RING QUAD
5
4
1
2
E
F
P
3
1
2
R
3
Pin Connections and Package Marking
1 2 3 6 5 4
Notes: 1. Package marking provides orientation and identification. 2. See "Electrical Specifications" for appropriate package marking.
Absolute Maximum Ratings[1] TC = 25C
Symbol
If PIV Tj Tstg jc
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TC = 25C, Single Diode[3]
Part Number HSMS[4]
2820 2822 2823 2824 2825 2827 2828 2829 282B 282C 282E 282F 282K 282L 282M 282N 282P 282R
Test Conditions
Notes: 1. VF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. CTO for diodes in pairs and quads is 0.2 pF maximum. 3. Effective Carrier Lifetime () for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. See section titled "Quad Capacitance." 5. RD = RS + 5.2 at 25C and If = 5 mA.
GUx
Package Marking Code
C0 C2 C3 C4 C5 C7 C8 C9 C0 C2 C3 C4 CK CL HH NN CP OO 0 2 3 4 5 7 8 9 B C E F K L M N P R
Parameter
Forward Current (1 s Pulse) Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance
[2]
Unit
Amp V C C C/W
SOT-23/SOT-143
1 15 150 65 to 150 500
SOT-323/SOT-363
1 15 150 65 to 150 150
Lead Code Configuration
Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[4] Bridge Quad[4] Crossover Quad Single Series Common Anode Common Cathode High Isolation Unconnected Pair Unconnected Trio Common Cathode Quad Common Anode Quad Bridge Quad Ring Quad
Minimum Breakdown Voltage VBR (V)
15
Maximum Forward Voltage VF (mV)
340
Maximum Maximum Forward Reverse Voltage Leakage VF (V) @ IR (nA) @ IF (mA) VR (V)
0.5 10 100 1
Maximum Capacitance CT (pF)
1.0
Typical Dynamic Resistance RD ()[5]
12
IR = 100 mA
IF = 1 mA[1]
VR = 0V[2] f = 1 MHz
IF = 5 mA
2
Quad Capacitance
Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing ac curate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. Avago defines this measurement as "CM", and it is equiva lent to the capacitance of the diode by itself. The equiva lent diagonal and adjacent capacitances can then be cal culated by the formulas given below. In a quad, the diagonal capacitance is the capacitance be tween points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C3 x C 4 C1 x C 2 C DIAGONAL = _______ + _______ C1 + C 2 C3 + C4 The equivalent x C 2 C 1 adjacentCcapacitance is the capacitance 3xC 4 C DIAGONAL = _______ + _______ 1 between points + ____________ A and C in the figure below. This capaci C ADJACENT = C 1 + C C1 C3 + C4 2 tance is calculated using the following formula 11 1 -- + -- + -- 1 C2 C3 C C ADJACENT = C 1 + ____________ 4 11 1 -- + -- 8.33 X 10 -5 nT + -- Rj= I + C 2 C 3 C4 I
b s
Linear Equivalent Circuit Model Diode Chip
Rj RS
Cj
RS = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is
where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, K n = ideality factor (see table of SPICE parameters) Note: To effectively model the packaged HSMS-282x product, please refer to Application Note AN1124.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
This information does -5 nT apply to crossover quad di 8.33 X 10 not Rj= odes. I b+ Is
C1 C C2 C4 B C3 A
SPICE Parameters
Parameter
BV CJ0 EG IBV IS N RS PB PT M V
Units
V pF eV A A
HSMS-282x
15 0.7 0.69 1E4 2.2E8 1.08 6.0 0.65 2 0.5
3
Typical Performance, TC = 25C (unless otherwise noted), Single Diode
100
IF - FORWARD CURRENT (mA)
CT - CAPACITANCE (pF)
10
IR - REVERSE CURRENT (nA)
TA = +125C TA = +75C TA = +25C TA = -25C
100,000 10,000 1000 100 10 1 TA = +125C TA = +75C TA = +25C 0 5 10 15 VR - REVERSE VOLTAGE (V)
1 0.8 0.6 0.4 0.2 0
1
0.1
0.01
0
0.10
0.20
0.30
0.40
0.50
0
2
4
6
8
VF - FORWARD VOLTAGE (V)
VR - REVERSE VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage at Temperatures.
1000
Figure 2. Reverse Current vs. Reverse Voltage at Temperatures.
30 30
Figure 3. Total Capacitance vs. Reverse Voltage.
100
1.0
VF - FORWARD VOLTAGE DIFFERENCE (mV)
IF - FORWARD CURRENT (mA)
10
10
IF - FORWARD CURRENT (A)
IF (Left Scale)
100
IF (Left Scale) 10
10
1
VF (Right Scale)
1
VF (Right Scale)
1 0.1
1
10
100
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3 1.4
1 0.10
0.15
0.20
0.1 0.25
IF - FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
VF - FORWARD VOLTAGE (V)
Figure 4. Dynamic Resistance vs. Forward Current.
Figure 5. Typical Vf Match, Series Pairs and Quads at Mixer Bias Levels.
Figure 6. Typical Vf Match, Series Pairs at Detector Bias Levels.
1 DC bias = 3 A 0.1
10 1 10
VO - OUTPUT VOLTAGE (V)
VO - OUTPUT VOLTAGE (V)
-25C +25C +75C
0.1 0.01 0.001 0.0001 1E-005 -20 -10
+25C
CONVERSION LOSS (dB)
9
0.01
RF in
18 nH 3.3 nH
HSMS-282B 100 pF
Vo
RF in 68
HSMS-282B 100 pF
Vo
8
7
100 K 0
4.7 K 20 30 6 0 2 4 6 8 10 12
0.001 -40
-30
-20
-10
0
10
Pin - INPUT POWER (dBm)
Pin - INPUT POWER (dBm)
LOCAL OSCILLATOR POWER (dBm)
Figure 7. Typical Output Voltage vs. Input Power, Small Signal Detector Operating at 850 MHz.
Figure 8. Typical Output Voltage vs. Input Power, Large Signal Detector Operating at 915 MHz.
Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz (Ref AN997).
4
VF - FORWARD VOLTAGE DIFFERENCE (mV)
RD - DYNAMIC RESISTANCE ()
Applications Information
Product Selection
Avago's family of surface mount Schottky diodes provide unique solutions to many design problems. Each is opti mized for certain applications. The first step in choosing the right product is to select the diode type. All of the products in the HSMS282x fam ily use the same diode chip-they differ only in package configuration. The same is true of the HSMS280x, 281x, 285x, 286x and 270x families. Each family has a different set of characteristics, which can be compared most easily by consulting the SPICE parameters given on each data sheet. The HSMS282x family has been optimized for use in RF applications, such as * DC biased small signal detectors to 1.5 GHz. * Biased or unbiased large signal detectors (AGC or power monitors) to 4 GHz. * Mixers and frequencymultipliers to 6 GHz. The other feature of the HSMS282x family is its unittounit and lottolot consistency. The silicon chip used in this series has been designed to use the fewest possible pro cessing steps to minimize variations in diode characteris tics. Statistical data on the consistency of this product, in terms of SPICE parameters, is available from Avago. For those applications requiring very high breakdown voltage, use the HSMS280x family of diodes. Turn to the HSMS281x when you need very low flicker noise. The HSMS285x is a family of zero bias detector diodes for small signal applications. For high frequency detector or mixer applications, use the HSMS286x family. The HSMS270x is a series of specialty diodes for ultra high speed clipping and clamping in digital circuits. 8.33 X 10 -5 nT R j = ------------ = R V - R I S+Ib 0.026 ----- at 25 C I S+Ib
V - IR S where ----- I = I S (e 0.026 - 1) n = ideality factor (see table of SPICE parameters)
s
T = temperature in K IS = saturation current (see table of SPICE parameters) Ib = externally applied bias current in amps Rv = sum of junction and series resistance, the slope of the VI curve IS is a function of diode barrier height, and can range from picoamps for high barrier diodes to as much as 5 A for very low8.33 X 10 -5 nT barrier diodes. R j = ------------ = R V - R s The Height ofI the Schottky Barrier S+Ib The currentvoltage characteristic of a Schottky barrier diode at0.026 temperature is described by the following room at 25 C ----- I equation: S + I b I = I S (e
S -----
V - IR 0.026
- 1)
Schottky Barrier Diode Characteristics
Stripped of its package, a Schottky barrier diode chip consists of a metalsemiconductor barrier formed by de position of a metal layer on a semiconductor. The most common of several different types, the passivated diode, is shown in Figure 10, along with its equivalent circuit. RS is the parasitic series resistance of the diode, the sum of the bondwire and leadframe resistance, the resistance of the bulk layer of silicon, etc. RF energy coupled into RS is lost as heat--it does not contribute to the rectified out put of the diode. CJ is parasitic junction capacitance of the diode, controlled by the thickness of the epitaxial layer and the diameter of the Schottky contact. Rj is the junc tion resistance of the diode, a function of the total current flowing through it.
On a semilog plot (as shown in the Avago catalog) the current graph will be a straight line with inverse slope 2.3 X 0.026 = 0.060 volts per cycle (until the effect of RS is seen in a curve that droops at high current). All Schottky diode curves have the same slope, but not necessarily the same value of current for a given voltage. This is determined by the saturation current, IS, and is related to the barrier height of the diode. Through the choice of ptype or ntype silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and RS will be changed. In general, very low barrier height diodes (with high values of IS, suitable for zero bias applications) are realized on ptype silicon. Such diodes suffer from higher values of RS than do the ntype.
RS
PASSIVATION LAYER
METAL
PASSIVATION N-TYPE OR P-TYPE EPI
SCHOTTKY JUNCTION
N-TYPE OR P-TYPE SILICON SUBSTRATE
Cj
Rj
CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP
EQUIVALENT CIRCUIT
Figure 10. Schottky Diode Chip.
5
HSMS-285A/6A fig 9
Thus, ptype diodes are generally reserved for detector applications (where very high values of RV swamp out high RS) and ntype diodes such as the HSMS282x are used for mixer applications (where high L.O. drive levels keep RV low). DC biased detectors and selfbiased detec tors used in gain or power control circuits.
* The two diodes are in parallel in the RF circuit, lowering the input impedance and making the design of the RF matching network easier. * The two diodes are in series in the output (video) circuit, doubling the output voltage. * Some cancellation of evenorder harmonics takes place at the input.
DC Bias
Detector Applications
Detector circuits can be divided into two types, large signal (Pin > 20 dBm) and small signal (Pin < 20 dBm). In general, the former use resistive impedance matching at the in put to improve flatness over frequency -- this is possible since the input signal levels are high enough to produce adequate output voltages without the need for a high Q reactive input matching network. These circuits are self biased (no external DC bias) and are used for gain and power control of amplifiers. Small signal detectors are used as very low cost receivers, and require a reactive input impedance matching net work to achieve adequate sensitivity and output voltage. Those operating with zero bias utilize the HSMS 285x family of detector diodes. However, superior performance over temperature can be achieved with the use of 3 to 30 A of DC bias. Such circuits will use the HSMS282x family of diodes if the operating frequency is 1.5 GHz or lower. Typical performance of single diode detectors (using HSMS2820 or HSMS282B) can be seen in the transfer curves given in Figures 7 and 8. Such detectors can be re alized either as series or shunt circuits, as shown in Figure 11.
DC Bias
Zero Biased Diodes
DC Biased Diodes
Figure 12. Voltage Doubler.
The most compact and lowest cost form of the doubler is achieved when the HSMS2822 or HSMS282C series pair is used. Both the detection sensitivity and the DC forward voltage of a biased Schottky detector are temperature sensitive. Where both must be compensated over a wide range of temperatures, the differential detector[2] is often used. Such a circuit requires that the detector diode and the reference diode exhibit identical characteristics at all DC bias levels and at all temperatures. This is accomplished through the use of two diodes in one package, for exam ple the HSMS2825 in Figure 13. In the Avago assembly facility, the two dice in a surface mount package are taken from adjacent sites on the wafer (as illustrated in Figure 14). This assures that the characteristics of the two diodes are more highly matched than would be possible through individual testing and hand matching.
bias
Shunt inductor provides video signal return Shunt diode provides video signal return
DC Bias
differential amplifier
Zero Biased Diodes
DC Biased Diodes
matching network
HSMS-2825
Figure 11. Single Diode Detectors.
The series and shunt circuits can be combined into a volt age doubler[1], as shown in Figure 12. The doubler offers three advantages over the single diode circuit.
Figure 13. Differential Detector.
[1] Avago Application Note 9564, "Schottky Diode Voltage Doubler." [2] Raymond W. Waugh, "Designing LargeSignal Detectors for Handsets and Base Stations," Wireless Systems Design, Vol. 2, No. 7, July 1997, pp 42 - 48.
6
bias
differential amplifier
matching network
HSMS-282P
Figure 14. Fabrication of Avago Diode Pairs.
Figure 17. Voltage Doubler Differential Detector.
In high power applications, coupling of RF energy from the detector diode to the reference diode can introduce error in the differential detector. The HSMS282K diode pair, in the six lead SOT363 package, has a copper bar between the diodes that adds 10 dB of additional isola tion between them. As this part is manufactured in the SOT363 package it also provides the benefit of being 40% smaller than larger SOT143 devices. The HSMS282K is illustrated in Figure 15 -- note that the ground connec tions must be made as close to the package as possible to minimize stray inductance to ground.
detector diode
However, care must be taken to assure that the two refer ence diodes closely match the two detector diodes. One possible configuration is given in Figure 16, using two HSMS2825. Board space can be saved through the use of the HSMS282P open bridge quad, as shown in Figure 17. While the differential detector works well over tempera ture, another design approach[3] works well for large signal detectors. See Figure 18 for the schematic and a physical layout of the circuit. In this design, the two 4.7 K resis tors and diode D2 act as a variable power divider, assuring constant output voltage over temperature and improving output linearity.
RF in 68
PA
Vbias
D1
4.7 K 33 pF
Vo 4.7 K D2 68 33 pF
HSMS-282K reference diode to differential amplifier
HSMS-2825 or HSMS-282K
RFin
HSMS-282K
Figure 15. High Power Differential Detector.
Vo 4.7 K
The concept of the voltage doubler can be applied to the differential detector, permitting twice the output voltage for a given input power (as well as improving input im pedance and suppressing second harmonics).
bias
Figure 18. Temperature Compensated Detector.
differential amplifier
HSMS-2825
matching network
HSMS-2825
In certain applications, such as a dualband cellphone handset operating at both 900 and 1800 MHz, the second harmonics generated in the power control output detec tor when the handset is working at 900 MHz can cause problems. A filter at the output can reduce unwanted emissions at 1800 MHz in this case, but a lower cost so lution is available[4]. Illustrated schematically in Figure 19, this circuit uses diode D2 and its associated passive components to cancel all even order harmonics at the detector's RF input. Diodes D3 and D4 provide tempera ture compensation as described above. All four diodes are contained in a single HSMS 282R package, as illustrated in the layout shown in Figure 20.
[3] Hans Eriksson and Raymond W. Waugh, "A Temperature Compensated Linear Diode Detector," to be published.
Figure 16. Voltage Doubler Differential Detector.
7
RF in 68 D2 R3
D1
R1
V+
HSMS-2829
V- R4 D4
C1
R2 D3
LO in RF in
C2
C1 = C2 100 pF R1 = R2 = R3 = R4 = 4.7 K D1 & D2 & D3 & D4 = HSMS-282R
IF out
Figure 19. Schematic of Suppressed Harmonic Detector.
HSMS-282R 4.7 K V+ 100 pF 4.7 K
Figure 22. Planar Double Balanced Mixer.
V-
100 pF
RF in
68
Figure 20. Layout of Suppressed Harmonic Detector.
A review of Figure 21 may lead to the question as to why the HSMS282R ring quad is open on the ends. Distor tion in double balanced mixers can be reduced if LO drive is increased, up to the point where the Schottky diodes are driven into saturation. Above this point, increased LO drive will not result in improvements in distortion. The use of expensive high barrier diodes (such as those fabricated on GaAs) can take advantage of higher LO drive power, but a lower cost solution is to use a eight (or twelve) diode ring quad. The open design of the HSMS282R permits this to easily be done, as shown in Figure 23.
Note that the forgoing discussion refers to the output volt age being extracted at point V+ with respect to ground. If a differential output is taken at V+ with respect to V, the circuit acts as a voltage doubler.
LO in
RF in
Mixer applications
The HSMS282x family, with its wide variety of packaging, can be used to make excellent mixers at frequencies up to 6 GHz. The HSMS2827 ring quad of matched diodes (in the SOT143 package) has been designed for double balanced mixers. The smaller (SOT363) HSMS282R ring quad can similarly be used, if the quad is closed with external connections as shown in Figure 21.
LO in HSMS-282R RF in
HSMS-282R
IF out
Figure 23. Low Distortion Double Balanced Mixer.
This same technique can be used in the singlebalanced mixer. Figure 24 shows such a mixer, with two diodes in each spot normally occupied by one. This mixer, with a sufficiently high LO drive level, will display low distortion.
RF in 180 hybrid LO in
HSMS-282R Low pass filter
IF out
Figure 24. Low Distortion Balanced Mixer.
IF out
Figure 21. Double Balanced Mixer.
[4] Alan Rixon and Raymond W. Waugh, "A Suppressed Harmonic Power Detector for Dual Band `Phones," to be published.
Both of these networks require a crossover or a three di mensional circuit. A planar mixer can be made using the SOT143 crossover quad, HSMS2829, as shown in Figure 22. In this product, a special lead frame permits the cross over to be placed inside the plastic package itself, elimi nating the need for via holes (or other measures) in the RF portion of the circuit itself. 8
Sampling Applications
The six lead HSMS282P can be used in a sampling circuit, as shown in Figure 25. As was the case with the six lead HSMS282R in the mixer, the open bridge quad is closed with traces on the circuit board. The quad was not closed internally so that it could be used in other applications, such as illustrated in Figure 17.
sample point HSMS-282P
Note that jc, the thermal resistance from diode junction to the foot of the leads, is the sum of two component re sistances, jc = pkg + chip (2)
Package thermal resistance for the SOT3x3 package is ap proximately 100C/W, and the chip thermal resistance for the HSMS282x family of diodes is approximately 40C/W. The designer will have to add in the thermal resistance from diode case to ambient -- a poor choice of circuit board material or heat sink design can make this number very high. Equation (1) would be straightforward to solve but for the fact that diode forward voltage is a function of tempera ture as well as forward current. The equation for Vf is: 11600 (V f - I f R s ) nT e 11600 (V f - I f R s ) - 1 nT e -1
sampling pulse
sampling circuit
Figure 25. Sampling Circuit.
Thermal Considerations
The obvious advantage of the SOT323 and SOT363 over the SOT23 and SOT142 is combination of smaller size and extra leads. However, the copper leadframe in the SOT3x3 has a thermal conductivity four times higher than the Alloy 42 leadframe of the SOT23 and SOT143, which enables the smaller packages to dissipate more power. The maximum junction temperature for these three fami lies of Schottky diodes is 150C under all operating con ditions. The following equation applies to the thermal analysis of diodes: Tj = (Vf If + PRF) jc + Ta where Tj = junction temperature Ta = diode case temperature jc = thermal resistance V f I f = DC power dissipated PRF = RF power dissipated (1) Is = I0 Is = I0 If = I S If = I S where
(3)
n = ideality factor T = temperature in K Rs = diode series resistance and IS (diode saturation current) is given by
2 n - 4060 T 2e 298 n - 4060 T
() ( 298 )
e
(1 T (1 T
1 298 1 - 298 -
) )
(4)
Equation (4) is substituted into equation (3), and equa tions (1) and (3) are solved simultaneously to obtain the value of junction temperature for given values of diode case temperature, DC power dissipation and RF power dissipation.
9
Diode Burnout
Any Schottky junction, be it an RF diode or the gate of a MESFET, is relatively delicate and can be burned out with excessive RF power. Many crystal video receivers used in RFID (tag) applications find themselves in poorly con trolled environments where high power sources may be present. Examples are the areas around airport and FAA radars, nearby ham radio operators, the vicinity of a broadcast band transmitter, etc. In such environments, the Schottky diodes of the receiver can be protected by a device known as a limiter diode.[5] Formerly available only in radar warning receivers and other high cost electronic warfare applications, these diodes have been adapted to commercial and consumer circuits. Avago offers a complete line of surface mountable PIN limiter diodes. Most notably, our HSMP4820 (SOT23) can act as a very fast (nanosecond) powersensitive switch when placed between the antenna and the Schottky di ode, shorting out the RF circuit temporarily and reflecting the excessive RF energy back out the antenna.
[5] Avago Application Note 1050, "Low Cost, Surface Mount Power Limiters."
Assembly Instructions
SOT-3x3 PCB Footprint
Recommended PCB pad layouts for the miniature SOT 3x3 (SC70) packages are shown in Figures 26 and 27 (di mensions are in inches). These layouts provide ample al lowance for package placement by automated assembly equipment without adding parasitics that could impair the performance.
0.026
0.079 0.039
0.022 Dimensions in inches
Figure 26. Recommended PCB Pad Layout for Avago's SC70 3L/SOT-323 Products.
0.026
0.079
0.039
0.018 Dimensions in inches
Figure 27. Recommended PCB Pad Layout for Avago's SC70 6L/SOT-363 Products.
10
SMT Assembly
Reliable assembly of surface mount components is a com plex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT packages, will reach solder reflow temperatures fast er than those with a greater mass. Avago's diodes have been qualified to the timetempera ture profile shown in Figure 28. This profile is representa tive of an IR reflow type of surface mount assembly pro cess. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones.
tp
Ramp-up
The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to pro duce a reflow of the solder. The rates of change of temperature for the rampup and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to compo nents due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 260C. These parameters are typical for a surface mount assem bly process for Avago diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder.
Tp
Critical Zone T L to Tp
TL
Temperature
Ts
max
tL
Ts
min
Preheat
ts
Ramp-down
25
t 25 C to Peak
Time
Figure 28. Surface Mount Assembly Profile.
Lead-Free Reflow Profile Recommendation (IPC/JEDEC J-STD-020C)
Reflow Parameter
Average rampup rate (Liquidus Temperature (TS(max) to Peak) Preheat Temperature Min (TS(min)) Temperature Max (TS(max)) Time (min to max) (tS) Ts(max) to TL Rampup Rate Time maintained above: Peak Temperature (TP) Time within 5 C of actual Peak temperature (tP) Rampdown Rate Time 25 C to Peak Temperature Temperature (TL) Time (tL)
Lead-Free Assembly
3C/ second max 150C 200C 60180 seconds 3C/second max 217C 60150 seconds 260 +0/5C 2040 seconds 6C/second max 8 minutes max
Note 1: All temperatures refer to topside of the package, measured on the package body surface
11
Package Dimensions
Outline 23 (SOT-23)
e2 e1
Outline SOT-323 (SC-70 3 Lead)
e1
E
E
XXX
e
E1
XXX
e
E1
L B D SYMBOL A A1 B C D E1 e e1 E L C DIMENSIONS (mm) MIN. MAX. 0.80 1.00 0.00 0.10 0.15 0.40 0.10 0.20 1.80 2.25 1.10 1.40 0.65 typical 1.30 typical 1.80 2.40 0.425 typical
L B D SYMBOL A A1 B C D E1 e e1 e2 E L C DIMENSIONS (mm) MIN. 0.79 0.000 0.37 0.086 2.73 1.15 0.89 1.78 0.45 2.10 0.45 MAX. 1.20 0.100 0.54 0.152 3.13 1.50 1.02 2.04 0.60 2.70 0.69
A
A
A1
A1
Notes: XXX-package marking Drawings are not to scale
Notes: XXX-package marking Drawings are not to scale
Outline 143 (SOT-143)
e2 e1 B1
Outline SOT-363 (SC-70 6 Lead)
DIMENSIONS (mm) SYMBOL E D HE A A2 A1 Q1 e b c L MIN. MAX. 1.15 1.35 1.80 2.25 1.80 2.40 0.80 1.10 0.80 1.00 0.00 0.10 0.10 0.40 0.650 BCS 0.15 0.30 0.10 0.20 0.10 0.30
HE
E
E
XXX
E1
e D
L B C DIMENSIONS (mm) SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. 0.79 0.013 0.36 0.76 0.086 2.80 1.20 0.89 1.78 0.45 2.10 0.45 MAX. 1.097 0.10 0.54 0.92 0.152 3.06 1.40 1.02 2.04 0.60 2.65 0.69
e
A1
Q1 A2 A
c
D
A
b
L
A1
Notes: XXX-package marking Drawings are not to scale
12
Device Orientation
REEL
For Outlines SOT-23, -323
TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
ABC
ABC
ABC
ABC
Note: "AB" represents package marking code. "C" represents date code.
For Outline SOT-143
TOP VIEW 4 mm END VIEW
For Outline SOT-363
TOP VIEW 4 mm END VIEW
Note: "AB" represents package marking code. "C" re presents date code.
13
ABC
ABC
ABC
ABC
8 mm
8 mm
ABC
ABC
ABC
ABC
Note: "AB" represents package marking code. "C" represents date code.
Tape Dimensions and Product Orientation For Outline SOT-23
P D
P2
E
P0
F W
t1
D1
9 MAX
Ko
8 MAX
13.5 MAX
A0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2 SIZE (mm) 3.15 0.10 2.77 0.10 1.22 0.10 4.00 0.10 1.00 + 0.05 1.50 + 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 - 0.10 0.229 0.013 3.50 0.05 2.00 0.05
B0 SIZE (INCHES) 0.124 0.004 0.109 0.004 0.048 0.004 0.157 0.004 0.039 0.002 0.059 + 0.004 0.157 0.004 0.069 0.004 0.315 +0.012 - 0.004 0.009 0.0005 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE DISTANCE BETWEEN CENTERLINE
For Outline SOT-143
P P0 D P2 E F W
D1 t1 9 M A X A0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2 SIZE (mm) 3.19 0.10 2.80 0.10 1.31 0.10 4.00 0.10 1.00 + 0.25 1.50 + 0.10 4.00 0.10 1.75 0.10 8.00 +0.30 - 0.10 0.254 0.013 3.50 0.05 2.00 0.05
K0
9 MAX
B0
SIZE (INCHES) 0.126 0.004 0.110 0.004 0.052 0.004 0.157 0.004 0.039 + 0.010 0.059 + 0.004 0.157 0.004 0.069 0.004 0.315+0.012 - 0.004 0.0100 0.0005 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE DISTANCE
14
Tape Dimensions and Product Orientation For Outlines SOT-323, -363
P P0 E D P2
F C
W
t 1 (CARRIER TAPE THICKNESS)
D1
Tt (COVER TAPE THICKNESS)
An
K0
An
A0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) ANGLE FOR SOT-323 (SC70-3 LEAD) FOR SOT-363 (SC70-6 LEAD) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 An SIZE (mm) 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.254 0.02 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05 8 C MAX 10 C MAX SIZE (INCHES) 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.0100 0.0008 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002
B0
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE
Part Number Ordering Information
Part Number
HSMS282xTR2G HSMS282xTR1G HSMS282xBLKG
No. of Devices
10000 3000 100
Container
13" Reel 7" Reel antistatic bag
x = 0, 2, 3, 4, 5, 7, 8, 9, B, C, E, F, K, L, M, N, P or R
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-4030EN AV02-1320EN - June 26, 2008

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